| 摘要 |
A method of programming a nonvolatile memory device includes sequentially programming first to (n−1)th logical pages of all the physical pages of a first memory block of the memory blocks in response to a first program command, a step of loading data of the first to (n−1)th logical pages stored in a first physical page of the first memory block and latching the loaded data in first to (n−1)th latches of each of the page buffers, respectively, when receiving a second program command after programming all the first to (n−1)th logical pages, and latching new program data, received along with the second program command, in an nth latch of the corresponding page buffer and programming the data, stored in the first to nth latches of the page buffer, into a first physical page of a second memory block of the memory blocks.
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