发明名称 |
FUSION BONDING PROCESS AND STRUCTURE FOR FABRICATING SILICON-ON-INSULATION (SOI) SEMICONDUCTOR DEVICES |
摘要 |
A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.
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申请公布号 |
US2010193908(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100757435 |
申请日期 |
2010.04.09 |
申请人 |
KULITE SEMICONDUCTOR PRODUCTS, INC. |
发明人 |
KURTZ ANTHONY D.;NED ALEXANDER A. |
分类号 |
H01L29/8605 |
主分类号 |
H01L29/8605 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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