| 摘要 |
A dry etching method for a silicon nitride film capable of improving throughput is provided. A dry etching method for dry-etching a silicon nitride film 103 includes dry-etching the silicon nitride film 103 without generating plasma by using a processing gas containing at least a hydrogen fluoride gas (HF gas) and a fluorine gas (F2 gas), with respect to a processing target object 100 including the silicon nitride film 103.
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