| 摘要 |
A data storage system for refreshing in place data stored in a non-volatile re-writeable memory is disclosed. Data from a location memory can be read into a temporary storage location; the data at the memory location can be erased; the read data error corrected if necessary; and then the read data can be programmed and rewritten back to the same memory location it was read from. One or more layers of the non-volatile re-writeable memory can be fabricated BEOL as two-terminal cross-point memory arrays that are fabricated over a substrate including active circuitry fabricated FEOL. A portion of the active circuitry can be electrically coupled with the one or more layers of two-terminal cross-point memory arrays to perform data operations on the arrays, such as refresh in place operations or a read operation that triggers a refresh in place operation. The arrays can include a plurality of two-terminal memory cells.
|
