| 摘要 |
The photodiode of the invention includes a stack of three layers including an intermediate layer (2) provided between first and second layers (1, 3) of semiconductors having a first type of conductivity, and a region (4) in contact with at least the intermediate layer (2) and the second layer (3) and extending transversally relative to the planes of the three layers (1, 2, 3), said region (4) having a second type of conductivity the opposite of the first type of conductivity. The intermediate layer (2) is made of a semiconducting material having the second type of conductivity, an inversion of the type of conductivity of the intermediate layer (2) from the second type of conductivity to the first type of conductivity being induced by the dopants of the first type of conductivity in the first and second layers (1, 3) so as to form a P-N junction with said region (4). |
