发明名称 |
METHOD FOR MANUFACTURING HIGH-PURITY ERBIUM, HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY ERBIUM, AND METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT |
摘要 |
<p>Provided is a method for manufacturing a high-purity erbium, wherein a crude erbium oxide is mixed with a reduced metal, erbium is reduced and distilled by heating the mixed material in vacuum, the reduced and distilled erbium is molten in an inert atmosphere and a high-purity erbium is obtained. A high-purity erbium which has a purity of 4N or more, excluding rare-earth elements and gas components, and contains 200 wtppm or less of oxygen is also provided. Furthermore, a method for highly purifying erbium, which is difficult to be purified in the metal's molten state with high vapor pressure, a high-purity erbium obtained by such method, a sputtering target composed of a high-purity material erbium, and a technology of efficiently and stably providing a metal gate thin film having a high-purity material erbium as the main component are also provided.</p> |
申请公布号 |
WO2010087227(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
WO2010JP50258 |
申请日期 |
2010.01.13 |
申请人 |
NIPPON MINING & METALS CO., LTD.;SHINDO YUICHIRO;YAGI KAZUTO |
发明人 |
SHINDO YUICHIRO;YAGI KAZUTO |
分类号 |
C22B59/00;C22B9/02;C22B9/04;C22B9/14;C22C28/00;C23C14/34 |
主分类号 |
C22B59/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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