发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped on a semiconductor chip with an aluminum electrode which is processed through direct soldering and wire bonding. <P>SOLUTION: A fine metal 11 penetrating through an aluminum oxide film 5 up to an aluminum electrode 4 is formed at an appropriate position of the aluminum oxide film 5 on the aluminum electrode 4 in the semiconductor chip 1. Both direct soldering and wire bonding is done in a kind of aluminum electrode with a fine metal penetrating through the oxide. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010171421(A) |
申请公布日期 |
2010.08.05 |
申请号 |
JP20090295970 |
申请日期 |
2009.12.25 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY |
发明人 |
LANG FENGQUN;HAYASHI YUSUKE;NAKAGAWA HIROSHI;AOYANAGI MASAHIRO;OHASHI HIROMICHI;YAMAGUCHI HIROSHI |
分类号 |
H01L21/60;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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