发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped on a semiconductor chip with an aluminum electrode which is processed through direct soldering and wire bonding. <P>SOLUTION: A fine metal 11 penetrating through an aluminum oxide film 5 up to an aluminum electrode 4 is formed at an appropriate position of the aluminum oxide film 5 on the aluminum electrode 4 in the semiconductor chip 1. Both direct soldering and wire bonding is done in a kind of aluminum electrode with a fine metal penetrating through the oxide. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010171421(A) 申请公布日期 2010.08.05
申请号 JP20090295970 申请日期 2009.12.25
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY 发明人 LANG FENGQUN;HAYASHI YUSUKE;NAKAGAWA HIROSHI;AOYANAGI MASAHIRO;OHASHI HIROMICHI;YAMAGUCHI HIROSHI
分类号 H01L21/60;H01L21/3205;H01L23/52 主分类号 H01L21/60
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