| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance element created by using an oxide semiconductor layer with controlled electric characteristics, a logic circuit created by utilizing a thin-film transistor, and a semiconductor device which is produced by utilizing the logic circuit. <P>SOLUTION: A silicon layer nitride 910 formed by the plasma CVD method using a gas, containing such hydrogen compounds as silane (SiH<SB>4</SB>), and ammonia (NH<SB>3</SB>) is disposed on an oxide semiconductor layer 905 applied to a resistance element 354, so that the silicon layer nitride 910 is directly contacted with the oxide semiconductor layer. Also, the silicon nitride layer is disposed in an oxide semiconductor layer 906 applied to a thin-film transistor 355 through a silicon layer oxide 909 functioning as a barrier layer. Hence, hydrogen is introduced into the oxide semiconductor layer 905 at a higher concentration than that of the oxide semiconductor layer 906. As a result, the resistance value of the oxide semiconductor layer 905, applied to the resistance element 354, becomes lower than the resistance value of the oxide semiconductor layer 906 applied to the thin-film transistor 355. <P>COPYRIGHT: (C)2010,JPO&INPIT |
