发明名称 ALKALI ETCHING METHOD AND MANUFACTURING METHOD USING THE SAME
摘要 PURPOSE: An alkali etching method and a wafer processing method using the same are provided to suppress metal contamination by controlling metal ions with chelating agents. CONSTITUTION: A wafer is provided by slicing an ingot. The wafer is planarized by polishing the wafer. The wafer is etched by injecting the etchant or chelating agents. The wafer is cleaned. The chelating agent suppresses the wafer contamination due to the metal ion by decreasing the density of the metal ion of the alkaline etchant. The chelating agent has the content of 0.2 to 0.4g as EDTA.
申请公布号 KR20100087462(A) 申请公布日期 2010.08.05
申请号 KR20090006467 申请日期 2009.01.28
申请人 SILTRON INC. 发明人 NAM, BYUNG WOOK;CHANG, YU SIN
分类号 H01L21/306 主分类号 H01L21/306
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