| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element having excellent light extraction efficiency and inexpensively manufacturable. <P>SOLUTION: A nitride semiconductor layer including at least a light-emitting layer 5 is formed on the upper surface of a translucent substrate 1. On the upper surface of the translucent substrate 1, recessed part regions and protruded part regions are formed. Either of the recess part regions and the protruded part regions is formed by arranging a plurality of polygons each having at least one apex having an interior angle not smaller than 180° in a plan view. The other of the recess part regions and the projecting part regions is formed not to be linearly connected to one another in a plan view. <P>COPYRIGHT: (C)2010,JPO&INPIT |
