| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC tool for gas phase development, which exhibits a good temperature following property even when used in a rapid temperature-raising/lowering device in which a sudden temperature difference occurs. SOLUTION: In the SiC tool for gas phase development having a mount surface for placing a semiconductor substrate, the sum of diffuse reflectance and transmissivity at room temperature of the mount surface is 0.11% or more but 20% or less, and the value of average roughness (Ra) of the mount surface is 0.02 times or more but 0.2 times or less the wavelength at which the black-body radiation intensity at the process maximum using temperature of gas phase development is maximized in a unitμm. COPYRIGHT: (C)2010,JPO&INPIT |
