发明名称 |
SUBSTRATE BAND GAP ENGINEERED MULTI-GATE PMOS DEVICES |
摘要 |
A multi-gate transistor and a method of forming a multi-gate transistor, the multi-gate transistor including a fin having an upper portion and a lower portion. The upper portion having a first band gap and the lower portion having a second band gap with the first band gap and the second band gap designed to inhibit current flow from the upper portion to the lower portion. The multi-gate transistor further including a gate structure having sidewalls electrically coupled with said upper portion and said lower portion and a substrate positioned below the fin.
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申请公布号 |
US2010193840(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100757917 |
申请日期 |
2010.04.09 |
申请人 |
DOYLE BRIAN S;JIN BEEN-YIH;KAVALIEROS JACK T;DATTA SUMAN |
发明人 |
DOYLE BRIAN S.;JIN BEEN-YIH;KAVALIEROS JACK T.;DATTA SUMAN |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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