| 摘要 |
False detection of a correction position in a multilayer semiconductor device is reduced. Prior to performing main detection, a control section (30) detects pattern candidates which correspond to a pattern (P) from an image picked up by means of a low magnification camera (23), and based on the positional relationship between the pattern candidate and registered coordinates, a detection point to be a correction point is roughly detected. Namely, the order of the pattern candidates and that of the registered coordinates are compared with each other, and the pattern candidate applicable to the order is specified as the detection point. Then, based on the detection point detected by the rough detection, the correction point is detected from an image picked up by a high magnification camera (22). Thus, since the correction points can be suitably ordered, false detection of the correction point can be reduced. |
