发明名称 |
ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR |
摘要 |
The invention relates to an arrangement for measurement of the temperature and of the thickness growth of silicon rods in a silicon deposition reactor, by means of a pyrometer which is located outside the reactor. The aim of the invention is to provide an arrangement which allows continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process, with adequate accuracy. This is achieved in that a contactlessly operating temperature measurement device (4) is provided for the temperature measurement and is arranged outside the silicon deposition reactor in front of a viewing window (2), in that the temperature measurement device (4) can be pivoted horizontally about a rotation axis (5) by means of a rotating drive (9), wherein the pivoting axis (5) runs parallel to the longitudinal axis of the silicon rod (1), and wherein the centre axis (6) of the temperature measurement device runs through the pivoting axis (5). |
申请公布号 |
WO2010086363(A2) |
申请公布日期 |
2010.08.05 |
申请号 |
WO2010EP50988 |
申请日期 |
2010.01.28 |
申请人 |
CENTROTHERM SITEC GMBH;WILFRIED, VOLLMAR;STUBHAN, FRANK |
发明人 |
WILFRIED, VOLLMAR;STUBHAN, FRANK |
分类号 |
C01B33/035 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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