| 摘要 |
The plinth i.e. floor plinth (1), has a planar C-base wall formed as a support wall (3) with an inner profiled C-profile breadth (PB) and an inner profiled C-profile depth (PT), where the plinth is formed as a border strip in a C-profile strip (2). An upper C-bracket (4) is provided with inner profiled upper bracket length (SLO) and a lower C-bracket (5) is provided with inner profiled lower bracket length (SLU), where the upper bracket length is larger than the lower bracket length. The brackets are adjusted with respect to each other at a mutual distance relative to a C-profile width (PW). |
