METAL OXIDE SEMICONDUCTOR, METHOD OF MANUFACTURING THE SAME, AND THIN-FILM TRANSISTOR USING THE SAME

摘要

<P>PROBLEM TO BE SOLVED: To provide: a metal oxide semiconductor manufacturable at a lowered process temperature, and achieving a thin-film transistor high in carrier mobility and a current on/off ratio; a method of manufacturing the same; and a thin-film transistor using the metal oxide semiconductor. Ž<P>SOLUTION: The metal oxide semiconductor 306 is formed on a substrate 301. The metal oxide semiconductor 306 is manufactured by sublimating a film 306' of a metal oxide precursor containing a surfactant. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž