发明名称 |
PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE |
摘要 |
Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
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申请公布号 |
US2010193758(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20090362532 |
申请日期 |
2009.01.30 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
TIAN WEI;WANG DEXIN;VAITHYANATHAN VENUGOPALAN;DONG YANG;BALAKRISHNAN MURALIKRISHNAN;IVANOV IVAN PETROV;SUN MING;DIMITROV DIMITAR V. |
分类号 |
H01L47/00;H01L21/20;H01L29/66 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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