发明名称 Anti-fuse circuit and semiconductor memory device
摘要 An anti-fuse circuit uses first to fifth power supplies which have first to fifth power supply voltages, respectively, in the order of highest to lowest during writing. The anti-fuse circuit includes: a first level shift circuit which is connected to the second to fourth power supplies and which converts a first logic signal that changes between the third and fourth power supply voltages into a second logic signal that changes between the second and fourth power supply voltages; a second level shift circuit which is connected to the first, second, and fourth power supplies and which converts the second logic signal into a third logic signal that changes between the first and fourth power supply voltages; a transistor having a source connected to the first power supply and a gate connected to the third logic signal; and an anti-fuse element having one end connected to the drain of the transistor and the other end connected to the fifth power supply.
申请公布号 US2010195416(A1) 申请公布日期 2010.08.05
申请号 US20100656486 申请日期 2010.02.01
申请人 ELPIDA MEMORY, INC. 发明人 AKAMATSU HIROSHI
分类号 G11C7/00;G11C17/16;H03K19/0175 主分类号 G11C7/00
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