| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging element in which the sensitivity and the dynamic range requirements can be satisfied, and reliability and image quality improvement can be attained. <P>SOLUTION: The solid-state imaging element 10 has a plurality of pixel portions 100. Each pixel portion 100 includes a photoelectric conversion portion 3 of a P-type semiconductor which generates holes according to incident light and stores the holes therein; a floating diffusion layer (FD) 5 which converts the holes generated by the photoelectric conversion portion 3 to a voltage according to the quantity of holes; a writing control gate WCG connected to an output of the floating diffusion layer (FD); and a writing transistor 16, having a floating gate FG located under the writing control gate WCG in which a stored electron quantity changes according to the voltage applied to the writing control gate WCG, wherein the change in the threshold voltage of the writing transistor 16 due to the change of the stored electron quantity in the floating gate FG is detected, by a reading transistor 17 sharing the floating gate FG and a reading circuit 20 reads out the change in the threshold voltage as an imaging signal, according to the holes generated by the photoelectric conversion portion 3. <P>COPYRIGHT: (C)2010,JPO&INPIT |
