发明名称 METHOD OF PLASMA ETCHING, AND CARRIER FOR USE IN SUCH METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for plasma etching elongate features in a generally planar workpiece of a type located in a chamber. SOLUTION: The method includes etching a test workpiece 13 in a flat configuration in the chamber, determining the respective angle of a longitudinal portion of the features 16 relative to an axis passing orthogonally through the workpiece, and determining the curvature of the workpiece, which is required to reduce the angles, at least over a central portion of the workpiece, substantially to 0°. The method further includes processing a further workpiece of the same type whilst it is curved with the determined curvature. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010171429(A) 申请公布日期 2010.08.05
申请号 JP20100012308 申请日期 2010.01.22
申请人 SPP PROCESS TECHNOLOGY SYSTEMS UK LTD 发明人 TOSSELL DAVID
分类号 H01L21/3065;H01L21/683 主分类号 H01L21/3065
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