发明名称 SEMICONDUCTOR DEVICE AND PROCESS OF FABRICATING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To minimize occurrence of peeling of a film on the interface of the film, or leakage between adjacent interconnects in an interlayer insulating film having film quality regions different from each other. <P>SOLUTION: An interlayer insulating film of single layer structure, i.e. a third insulating film 107, has a plurality of pores 120. The pore occupancy per unit volume in the third insulating film 107 changes in the direction of film thickness. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010171072(A) 申请公布日期 2010.08.05
申请号 JP20090010156 申请日期 2009.01.20
申请人 PANASONIC CORP 发明人 TSUTSUE MAKOTO
分类号 H01L21/768;C23C16/40;H01L21/316;H01L23/522 主分类号 H01L21/768
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