METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Abnormality of a wiring resistance value and short-circuits are suppressed by processing a semiconductor wafer with nitrogen plasma at a time after a step of arranging a resist pattern on an interlayer insulating film and dry-etching the interlayer insulating film or at a time after a step of further dry-etching a stressor SiN film in the state where the resist pattern is removed.