| 摘要 |
<p>The invention relates to a device that makes it possible to control a JFET transistor using a gate control circuit commonly used to control a MOSFET/IGBT. The device comprises: - a first unit consisting of a capacitor (C1) and gate resistor (Rg) connected in series, said first unit being connected between a first output terminal (100) of the control circuit (10) and the gate (G) of the JFET transistor, - a second unit consisting of a diode (D1) and discharge resistor (R1) connected in series, said second unit being connected between the capacitor (C1) and the gate resistor (Rg) of the first unit, as well as to a second output terminal (101) of the gate control circuit (10).</p> |
