EXPOSING METHOD AND DEVICE, AND METHOD OF MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve high overlay accuracy regardless of high-intensity exposure light or long-lasting exposure.

SOLUTION: In an exposing method of lighting a pattern of a reticle R with illuminating light IL for exposure and exposing a wafer W to the illuminating light IL via the pattern and a projection optical system PL, the position of an image of the pattern of the reticle R is measured by a spatial image-measuring system 34, the displacement amount of the position of the image of the pattern is predicted from temperature information of a reticle stage RST, and information on alignment of the image of the pattern with the wafer W is corrected based on a result of prediction.

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