| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon film composed of a polycrystal by using a micro-heater, a method for forming a pn junction, and a pn junction formed by using the same. SOLUTION: The silicon film is formed using a microheater including a substrate 10 and a metal pattern 30 separated from the substrate. The silicon film 100 is formed on the metal pattern by applying a voltage on the metal pattern of the microheater to heat the metal pattern and exposing the microheater in a source gas including silicon. The silicon film may be formed of a polycrystal slicon. The pn junction is formed by utilizing the microheater including the substrate 10, a conductive layer 20 on the substrate, and the metal pattern 30 separated from the substrate. By applying a voltage on the metal pattern of the microheater to heat the metal pattern, the pn junction is formed between the metal pattern and conductive layer. The pn junction contains a polycrystal silicon. COPYRIGHT: (C)2010,JPO&INPIT |
