| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device with surface morphology of a source electrode and a drain electrode, and ductility improved to improve the withstand voltage, and with an increase in on resistance suppressed, and to provide its manufacturing method. Ž<P>SOLUTION: The compound semiconductor device 1 includes a compound semiconductor layer 10 (a second compound semiconductor layer 12) to which a source region 21 and a drain region 25 are formed; and a source electrode 22 and a drain electrode 26 formed respectively corresponding to the source region 21 and the drain region 25. The source region 21 and the drain region 25 are formed by a region forming ohmic metal having the ohmic property to the compound semiconductor layer 10, and the source electrode 22 and the drain electrode 26 are formed by electrode forming ohmic metals 22m, 26m newly formed in the region where region forming ohmic metals 20r, 24r are removed and having the ohmic property to the source region 21 and the drain region 25. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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