| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which high stress reduction performance and heat radiation performance are compatible with each other, for both high reliability and adaptivity to large power. <P>SOLUTION: In the semiconductor device, a semiconductor chip, a lead electrode and a base electrode facing each other across the semiconductor chip, and a junction layer for electrically joining them are stacked. The semiconductor device is used with a heatsink member to be abutted with the base electrode. The base electrode includes a heat propagation part and a thermal expansion constricting part as a laminate. The semiconductor chip is joined to the heat propagation part of the base electrode via the junction layer, with the heat propagation part abutting against the heatsink member. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
