| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device high in erasing speed and small in interference between memory cells; and to provide a method for manufacturing the same. SOLUTION: In this nonvolatile semiconductor memory device 1, a laminate ML is formed by alternately stacking a plurality of interlayer dielectrics ILD and a plurality of control gate electrodes CG. A through-hole H extending in the stacking direction is formed in the laminate ML, and a part of the interlayer dielectric ILD facing the through-hole H through the through-hole H is etched to remove the portion to form a removed portion A. Next, an insulating film IPD is formed on inner faces of the through-hole H and the removed portion A, a floating gate electrode FG formed of silicon is formed in the removed portion A, and an insulating film TOx is formed to cover a portion of the floating gate electrode FG facing the through-hole H. A semiconductor pillar SP is buried in the through-hole H. COPYRIGHT: (C)2010,JPO&INPIT |
