| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser device that prevents a pn junction of a semiconductor laser element from short-circuiting. SOLUTION: A semiconductor element 2A has an upper-face side electrode layer 1 and a lower-face side electrode layer 4 sandwiching an active layer 3 therebetween. The semiconductor element is solder-bonded to the sub-mount 7 side via the lower-face side electrode layer 4. The main face of the lower-face side electrode layer 4 is configured to be smaller than the main face of the semiconductor element 2A such that both ends on the side of the side face, perpendicular to a laser-beam emitting face of the semiconductor element 2A, in the outer edge of the main face of the lower-face side electrode layer 4 are located at a position inward by a prescribed distance from the outer edge of the main face of the semiconductor element 2A. COPYRIGHT: (C)2010,JPO&INPIT
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