发明名称 |
Silicided Semiconductor Structure and Method of Forming the Same |
摘要 |
A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
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申请公布号 |
US2010193867(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20090364804 |
申请日期 |
2009.02.03 |
申请人 |
YAN JIANG;HAFFINER HENNING;HUEBINGER FRANK;KIM SUNOO;LINDSAY RICHARD;SCHRUEFER KLAUS |
发明人 |
YAN JIANG;HAFFINER HENNING;HUEBINGER FRANK;KIM SUNOO;LINDSAY RICHARD;SCHRUEFER KLAUS |
分类号 |
H01L29/43;H01L21/28;H01L27/06 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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