| 摘要 |
Disclosed is a solid-state image sensing device containing an electron multiplication function. In a cross section perpendicular to an electron transfer direction in a multiplication register (EM), an insulation layer (2) has a center area, the thickness of which is larger than the thicknesses of opposed side portions of the insulation layer; and a pair of overflow drains (1N) are formed in boundaries between the center area and the opposed side portions of an N-type semiconductor area (1C), and each overflow drain (1N) extends in the electron transfer direction in the multiplication register (EM). Overflow gate electrodes (G) extend from a thin portion to thick portions of the insulation layer (2), and are provided between the insulation layer (2) and the opposed ends of each transfer electrode (8A, 8B) in the longitudinal direction thereof, to function as shield electrodes for the electrodes (8A, 8B). |
