| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has an RC-IGBT element and can operate an FWD element uniformly and restrain snapback of the FWD element. Ž<P>SOLUTION: In a second major surface side of a semiconductor substrate of an N-conductivity type, a collector region constituting an IGBT element and a cathode region constituting an FWD element are provided in parallel, along one direction vertical to a thickness direction of the semiconductor substrate. At least a part of a base region provided to a first major surface side is provided with an emitter region, and a channel is formed adjacent to the emitter region when the IGBT element is "on" and is under operation. In the first major surface-side front layer of the semiconductor substrate, one of regions located between adjacent two of the channels, including a base region which is opposed to the cathode region and which is electrically coupled with an emitter electrode, is an IGBT region. Among a plurality of IGBT regions which are made wide regions, the remaining regions are made as narrow regions wherein the number of narrow regions is more than that of wide regions. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
