| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which selectively prevents an irradiating mask for irradiating He ions from peeling from a semiconductor substrate, thereby precisely forming a low-lifetime region in a desired region of the semiconductor substrate. Ž<P>SOLUTION: After an oxide film 23 is formed on a rear 11B of a semiconductor substrate 11 forming a semiconductor element 12, the semiconductor substrate 11 is jointed to an irradiating mask 25 for having the He ions selectively irradiated on the semiconductor substrate 11 via the oxide film 23. Thereafter, the He ions are selectively irradiated onto the semiconductor substrate 11 via the irradiating mask 25 to form a plurality of low-lifetime regions 13 in the semiconductor substrate 11 of a portion corresponding to the rear 11B. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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