| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an LDD (Lightly Doped Drain) diffusion layer for a highly pressure-resistive transistor for forming a source/drain region of an offset structure without the need for additional steps. Ž<P>SOLUTION: An electrode forming film 41 having a first insulating film 42 on its upper surface is formed on a semiconductor substrate 11 via a gate insulating film 21. A first gate electrode 22 and a plurality of dummy patterns 51 disposed along both sides of the first gate electrode apart from each other are formed by the electrode forming film 41. The first LDD diffusion layers 23, 24 are formed in the semiconductor substrate 11 by ion implantation using the first gate electrode 22 and the dummy patterns 51 as masks. First sidewalls 25 are formed on a sidewall of the first gate electrode 22, on sidewalls of the dummy patterns 51, between the first gate electrode 22 and each dummy pattern 51 and between the respective dummy patterns 51. First source/drain regions 26, 27 are formed on the semiconductor substrate 11 using the first gate electrode 22, each dummy pattern 51 and each first sidewall 25 as masks. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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