发明名称 |
METHOD FOR FORMING SILICON PARTICLE LAYER AND METHOD FOR FORMING SILICON FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon particle layer capable of being converted into a high purity silicon film or a high performance silicon alloy film, and to provide a method for forming a silicon film by using the silicon particle layer. SOLUTION: The method for forming the silicon particle layer includes immersing a pair of electrodes comprising a cathode and an anode into a liquid composition containing silicon particles and depositing silicon particles on the cathode by generating an electric field between the pair of electrodes. The method for forming the silicon film includes converting the silicon particle layer on the cathode into the silicon film by heating the cathode having the silicon particle layer. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010168633(A) |
申请公布日期 |
2010.08.05 |
申请号 |
JP20090013409 |
申请日期 |
2009.01.23 |
申请人 |
JSR CORP;JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
MATSUKI YASUO;SHIMODA TATSUYA;SHIN NAKAE;KAWAJIRI RYO |
分类号 |
C25D13/02;C25D13/22 |
主分类号 |
C25D13/02 |
代理机构 |
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