发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RELATED METHOD
摘要 Embodiments of the invention provide a semiconductor integrated circuit device and a method for fabricating the device. In one embodiment, the method comprises forming a plurality of preliminary gate electrode structures in a cell array region and a peripheral circuit region of a semiconductor substrate; forming selective epitaxial films on the semiconductor substrate in the cell array region and the peripheral region; implanting impurities into at least some of the selective epitaxial films to form elevated source/drain regions in the cell array region and the peripheral circuit region; forming a first interlayer insulating film; and patterning the first interlayer insulating film to form a plurality of first openings exposing the elevated source/drain regions. The method further comprises forming a first ohmic film, a first barrier film, and a metal film; and removing portions of each of the metal film, the first barrier film, and the first ohmic film.
申请公布号 US2010197101(A1) 申请公布日期 2010.08.05
申请号 US20100754766 申请日期 2010.04.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK HEE-SOOK
分类号 H01L21/336 主分类号 H01L21/336
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