| 摘要 |
A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling. |
| 申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;KELLERMAN, PETER, L.;CARLSON, FREDERICK;SINCLAIR, FRANK |
发明人 |
KELLERMAN, PETER, L.;CARLSON, FREDERICK;SINCLAIR, FRANK |
