发明名称 |
METHOD OF FABRICATING NANOSTRUCTURES AND NANOWIRES AND DEVICE FABRICATED THEREFROM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of fabricating nanostructures and nanowires and a device fabricated therefrom. <P>SOLUTION: A one-dimensional nanostructure has a uniform diameter of less than approximately 200 nm. Such new nanostructure which is called as "a nanowire" includes a single-crystal homostructure as well as heterostructure of at least two single crystal materials having different chemical compositions. Because the single crystal material is used to form the heterostructure, the resultant heterostructure may be a single crystal as well. The nanowire heterostructure is generally based on a semiconducting wire in which the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN). <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010167560(A) |
申请公布日期 |
2010.08.05 |
申请号 |
JP20100035259 |
申请日期 |
2010.02.19 |
申请人 |
REGENTS OF THE UNIV OF CALIFORNIA |
发明人 |
MAJUMDAR ARUN;SHAKOURI ALI;SANDS TIMOTHY D;YANG PEIDONG;MAO SAMUEL S;RUSSO RICHARD E;FEICK HENNING;KIND HANNES;WEBER EICKE R;HUANG MICHAEL;YAN HAOQUAN;WU YIYING;FAN RONG |
分类号 |
B82B1/00;B82B3/00;C01B33/029;C01G9/02;G02B6/10;H01L21/20;H01L23/49;H01L29/06;H01L29/12;H01L29/88;H01L33/06;H01L33/24;H01L35/00;H01L41/09;H01L41/18;H01S5/34 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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