发明名称 METHOD OF FABRICATING NANOSTRUCTURES AND NANOWIRES AND DEVICE FABRICATED THEREFROM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of fabricating nanostructures and nanowires and a device fabricated therefrom. <P>SOLUTION: A one-dimensional nanostructure has a uniform diameter of less than approximately 200 nm. Such new nanostructure which is called as "a nanowire" includes a single-crystal homostructure as well as heterostructure of at least two single crystal materials having different chemical compositions. Because the single crystal material is used to form the heterostructure, the resultant heterostructure may be a single crystal as well. The nanowire heterostructure is generally based on a semiconducting wire in which the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN). <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010167560(A) 申请公布日期 2010.08.05
申请号 JP20100035259 申请日期 2010.02.19
申请人 REGENTS OF THE UNIV OF CALIFORNIA 发明人 MAJUMDAR ARUN;SHAKOURI ALI;SANDS TIMOTHY D;YANG PEIDONG;MAO SAMUEL S;RUSSO RICHARD E;FEICK HENNING;KIND HANNES;WEBER EICKE R;HUANG MICHAEL;YAN HAOQUAN;WU YIYING;FAN RONG
分类号 B82B1/00;B82B3/00;C01B33/029;C01G9/02;G02B6/10;H01L21/20;H01L23/49;H01L29/06;H01L29/12;H01L29/88;H01L33/06;H01L33/24;H01L35/00;H01L41/09;H01L41/18;H01S5/34 主分类号 B82B1/00
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