发明名称 |
In-Situ Formed Capping Layer in MTJ Devices |
摘要 |
A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.
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申请公布号 |
US2010193891(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100756743 |
申请日期 |
2010.04.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG YUNG-HUNG;WANG YU-JEN;JUANG MARK;TSAI CHIA-SHIUNG |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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