| 发明名称 |
PHOTOELECTROCHEMICAL ETCHING FOR LASER FACETS |
| 摘要 |
A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.
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| 申请公布号 |
US2010195684(A1) |
申请公布日期 |
2010.08.05 |
| 申请号 |
US20100697857 |
申请日期 |
2010.02.01 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
TAMBOLI ADELE C.;HU EVELYN L.;DENBAARS STEVEN P.;CHAKRABORTY ARPAN |
| 分类号 |
H01S5/323;H01L21/302;H01L21/306;H01L21/66 |
主分类号 |
H01S5/323 |
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