发明名称 |
METHODS OF FABRICATING CAPACITORS INCLUDING LOW-TEMPERATURE CAPPING LAYERS |
摘要 |
In a method of fabricating a capacitor, a lower electrode is formed, and a dielectric layer is formed on the lower electrode. An upper electrode is foamed on the dielectric layer opposite the lower electrode. A low-temperature capping layer is formed on the upper electrode at a temperature of less than about 300° C. Related devices and fabrication methods are also discussed.
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申请公布号 |
US2010196592(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
US20100699576 |
申请日期 |
2010.02.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WAN-DON;CHO KYU-HO;KIM JIN-YONG;CHOI JAE-HYOUNG;LIM JAE-SOON;KWON OH-SEONG;KIM BEOM-SEOK;TAK YONG-SUK |
分类号 |
B05D5/12 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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