发明名称 METHODS OF FABRICATING CAPACITORS INCLUDING LOW-TEMPERATURE CAPPING LAYERS
摘要 In a method of fabricating a capacitor, a lower electrode is formed, and a dielectric layer is formed on the lower electrode. An upper electrode is foamed on the dielectric layer opposite the lower electrode. A low-temperature capping layer is formed on the upper electrode at a temperature of less than about 300° C. Related devices and fabrication methods are also discussed.
申请公布号 US2010196592(A1) 申请公布日期 2010.08.05
申请号 US20100699576 申请日期 2010.02.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM WAN-DON;CHO KYU-HO;KIM JIN-YONG;CHOI JAE-HYOUNG;LIM JAE-SOON;KWON OH-SEONG;KIM BEOM-SEOK;TAK YONG-SUK
分类号 B05D5/12 主分类号 B05D5/12
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