METHOD AND APPARATUS FOR FORMING I/O CLUSTERS IN INTEGRATED CIRCUITS

摘要

Disclosed is an I/O cluster (300) and a manufacturing method thereof. The I/O cluster comprises a first I/O pad (302) and a second I/O pad (304). The first I/O pad comprises a first type transistor (318) disposed at a first end of the first I/O pad, and a second type transistor (322) disposed away from the first end. The second I/O pad comprises another first type transistor (320) disposed at a first end of the second I/O pad, and another second type transistor (324) disposed away from the first end, the second I/O pad being adjacent to the first I/O pad so the first type transistor is closer to the other first type transistor (318) than to the other second type transistor (322). The I/O pad layout reduces the risks of electrostatic discharge and latch up.