发明名称 PATTERN GENERATION METHOD, AND PATTERN FORMATION METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce poor charge failure of a pattern and suppress lowering of throughput in imprint lithography. <P>SOLUTION: This method of generating an uneven pattern is provided as a method of forming patterns in which uneven patterns in a template are filled with resist materials, and the depth of the uneven pattern formed in the template is adjusted or the uneven pattern is divided based on the relation between the size or shape of the uneven pattern and the charge time of the resist material. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010171338(A) 申请公布日期 2010.08.05
申请号 JP20090014558 申请日期 2009.01.26
申请人 TOSHIBA CORP 发明人 KOBIKI AYUMI;MUKAI HIDEFUMI;KOSHIBA TAKESHI;MITSUYOSHI YASURO;NAKAGAWA YASUTADA
分类号 H01L21/027;G03F1/00;G03F1/68 主分类号 H01L21/027
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