| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To more accurately control dimensions of a light-shielding film pattern. <P>SOLUTION: A method for manufacturing a photomask is provided, which includes processes of: forming a resist pattern that covers a region where a light-shielding film pattern is to be formed, on the light-shielding film; starting etching of the light-shielding film by using the resist pattern as a mask, and stopping etching after the light-shielding film not covered with the resist pattern is removed; irradiating the substrate with light through the other major surface so as to align the edge of the resist pattern to the edge of the light-shielding film; and seizing the edge position, deciding additional etching time on the basis of the determined edge position, and carrying out side-etching of the light-shielding film. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
