发明名称 DEPOSITION APPARATUS AND SUBSTRATE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a deposition apparatus capable of film deposition in a uniform film thickness without increasing power to be inputted to a plasma gun with time in during its continuous operation. Ž<P>SOLUTION: The deposition apparatus includes a vacuum chamber 3, a plasma gun 9 adapted to emit a plasma onto a deposition material 22 accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun. The deposition apparatus comprises a mass flow controller 25 adapted to change flow rate of the discharge gas, and a control circuit 26 which is connected to the mass flow controller and adapted to control, the change in flow rate by the mass flow controller, based on a predetermined setting. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010168648(A) 申请公布日期 2010.08.05
申请号 JP20090273988 申请日期 2009.12.01
申请人 CANON ANELVA CORP 发明人 MORIWAKI TAKAYUKI
分类号 C23C14/32 主分类号 C23C14/32
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