| 摘要 |
PURPOSE: A plasma etching method, a plasma etching device, and a storage medium are provided to form a hole with a high aspect ratio by etching a layer with a high etching rate. CONSTITUTION: A hole is formed on an object layer with a plasma etching. In a first condition, plasma is generated in a process container by turning on a high frequency power applying unit for generating plasma and a negative DC voltage is applied to a top electrode(34) from a DC source(50). In a second condition, the plasma is eliminated in the process container by turning off the high frequency power applying unit for generating plasma and a negative DC voltage is applied to the top electrode from the DC source. A positive charge is neutralized in the hole by supplying a negative ion by a current voltage.
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