| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for interrupting between a resist film and environment or water by applying a coating film onto the resist film, which coating film is characterized in that an exposed portion and a non-exposed portion dissolve at similar rates in a developing solution in a short period of time, for a method for applying a top coat onto the surface of the resist. <P>SOLUTION: A method for producing the top coat film for lithography comprises: dissolving a polymer having one or more kinds selected from fluorocarbinol group which may be protected, sulfonic group, fluoroalkyl sulfonic group, and carboxylic group in its molecule and dissolving in an alkali developing solution, in an organic solvent containing an alkane hydrocarbon solvent in an amount of ≥40 wt.%; and then applying the resulting solution onto the photoresist film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
