| 发明名称 |
INTEGRATED FIN-JFET AND FIN-MOSFET AND ASSOCIATED METHOD |
| 摘要 |
<p>Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.</p> |
| 申请公布号 |
EP2212908(A2) |
申请公布日期 |
2010.08.04 |
| 申请号 |
EP20080851841 |
申请日期 |
2008.10.27 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
EL-KAREH, BADIH;FORBES, LEONARD |
| 分类号 |
H01L21/336;H01L21/84;H01L27/092;H01L27/098;H01L27/12;H01L29/78 |
主分类号 |
H01L21/336 |
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