| 发明名称 |
Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation |
| 摘要 |
The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.
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| 申请公布号 |
US7768821(B2) |
申请公布日期 |
2010.08.03 |
| 申请号 |
US20080169264 |
申请日期 |
2008.07.08 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
THOMAS OLIVIER;COLLONGE MICHAEL;VINET MAUD |
| 分类号 |
G11C11/00;G11C11/34 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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