发明名称 |
Display device and manufacturing method of the same |
摘要 |
A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
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申请公布号 |
US7768009(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20080196798 |
申请日期 |
2008.08.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOBAYASHI SATOSHI;KAWAMATA IKUKO;DAIRIKI KOJI;KOMORI SHIGEKI;ISA TOSHIYUKI;YAMAZAKI SHUNPEI |
分类号 |
H01L29/04;H01L27/12;H01L29/10 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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